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15 October 2015 Simulation of semiconductor nanowire photodetectors with high photoconductive gain
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Proceedings Volume 9674, AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology; 96742L (2015) https://doi.org/10.1117/12.2202385
Event: Applied Optics and Photonics China (AOPC2015), 2015, Beijing, China
Abstract
In this paper, first we simulate the light absorption of individual cylindrical nanowire with the diameter ranging from 100 to 300 nm, it is found that the absorption peak has a red-shift along with the increased diameter. Then some numerical simulations have been done to elucidate the high gain mechanism and investigate the dependence of photoconductive gain on various parameters, such as doping, surface state density, and structure. The results show that optimizing these parameters appropriately can lead photoconductive gain up to 106, and give a reliable guiding to the actual device design.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hanqing Cao, Jianjun Lai, Ji Zhu, Hongwei Li, Changhong Chen, and Ying Huang "Simulation of semiconductor nanowire photodetectors with high photoconductive gain", Proc. SPIE 9674, AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology, 96742L (15 October 2015); https://doi.org/10.1117/12.2202385
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