15 October 2015 Multi-element double ring infrared detector based on InSb
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Proceedings Volume 9674, AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology; 967433 (2015) https://doi.org/10.1117/12.2203196
Event: Applied Optics and Photonics China (AOPC2015), 2015, Beijing, China
Abstract
A multi-element double ring infrared detector based on InSb p-n photodiodes is presented. The presented detector includes an outer ring detector and an inner ring detector. Each ring consist 10 detector elements, five mid-wave infrared detector elements and five short wave infrared detector elements. Two wavebands of 3.5–5 μm and 1.5–3 μm in mid-wave infrared and short wave infrared are adopted. The mid-wave infrared and short wave infrared detector elements are arranged alternately and close to each other to form detection pair. Between the adjacent detector elements, there is an interval to avoid cross talk. Dual band filter thin films are directly coated on the photodiode surface to form a dual band infrared detector. The double ring detector which can perform dual band IR counter-countermeasures can track target effectively under infrared countermeasure conditions.
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Mo Li, Hui Lv, Li Guo, Zhu Liu, "Multi-element double ring infrared detector based on InSb", Proc. SPIE 9674, AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology, 967433 (15 October 2015); doi: 10.1117/12.2203196; https://doi.org/10.1117/12.2203196
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