28 October 2016 Stress reduction and structural properties of Ta2O5/SiO2 mixture films produced by ion-beam sputtering
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Proceedings Volume 9683, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 968323 (2016) https://doi.org/10.1117/12.2244163
Event: Eighth International Symposium on Advanced Optical Manufacturing and Testing Technology (AOMATT2016), 2016, Suzhou, China
Abstract
Ta2O5/SiO2 mixture films with different composition ratios deposited by ion-beam sputtering were investigated. The different refractive indexes with different composition ratios were measured by Spectroscopic Ellipsometry. The relations between residual stress and structural properties were studied by X-ray diffraction (XRD) and transmission electron microscopy (TEM). It was found that the high compressive stress observed in SiO2 films (n=1.65-2.0, Ref. λ=500nm) was reduced significantly by mixing a properly amount of Ta2O5 Ta2O5=-234MPa<σSiO2=-510MPa). Through analyzing microstructure properties and optical properties of Ta2O5/SiO2 mixture films, we found that the residual compressive stress was only related with the intrinsic stress σintr and the extrinsic stress σext. A model of stress evolution has been proposed to illustrate the mechanism of stress reduction . The reduction of compressive stress was due to less lattice mismatch and more vacancies. Moreover, the scanning electron microscopy (SEM) result showed that the surface quality of SiO2 film was improved by mixing a relatively amount of Ta2O5 (n=1.85, Ref. λ=500nm).
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Yunti Pu, Yunti Pu, Zhao Qiao, Zhao Qiao, Gang Wang, Gang Wang, Fuming Qiu, Fuming Qiu, Ping Ma, Ping Ma, Siyu Wang, Siyu Wang, } "Stress reduction and structural properties of Ta2O5/SiO2 mixture films produced by ion-beam sputtering", Proc. SPIE 9683, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 968323 (28 October 2016); doi: 10.1117/12.2244163; https://doi.org/10.1117/12.2244163
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