27 September 2016 The effects of Ga incorporation on the crystalline quality of AlInAs metamorphic buffer using x-ray characterization
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Proceedings Volume 9684, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test, Measurement Technology, and Equipment; 96843O (2016) https://doi.org/10.1117/12.2242556
Event: Eighth International Symposium on Advanced Optical Manufacturing and Testing Technology (AOMATT2016), 2016, Suzhou, China
Abstract
The Al(Ga)InAs metamorphic buffers grown by metal organic chemical vapor deposition (MOCVD) on GaAs substrates with miscut angles toward (111)A exhibit anisotropic properties in the two <110> directions. The dislocation distributions of samples were examined using X-ray rocking curve along two orthogonal <110> directions and the measurement results suggested that Ga incorporation can reduce the density of α dislocation. There is an inflection point of substrate miscut above which the type of higher dislocation density switched from α to β types, while Ga incorporation can change the location of the inflection point.
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Y. He, Y. He, Y. Song, Y. Song, Y. R. Sun, Y. R. Sun, S. Z. Yu, S. Z. Yu, Y. M. Zhao, Y. M. Zhao, J. R. Dong, J. R. Dong, } "The effects of Ga incorporation on the crystalline quality of AlInAs metamorphic buffer using x-ray characterization", Proc. SPIE 9684, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test, Measurement Technology, and Equipment, 96843O (27 September 2016); doi: 10.1117/12.2242556; https://doi.org/10.1117/12.2242556
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