25 October 2016 THz transmittance and electrical properties of silicon doped vanadium dioxide films tuning by annealing temperature
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Proceedings Volume 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices; 968603 (2016) https://doi.org/10.1117/12.2242776
Event: Eighth International Symposium on Advanced Optical Manufacturing and Testing Technology (AOMATT2016), 2016, Suzhou, China
Abstract
Silicon doped vanadium dioxide (VO2) films were successfully prepared on high purity Si(111) substrate. Confirmed by X-ray diffraction, all samples showed a preference orientation of (011) direction. Introducing silicon led grain sizes decreasing comparing to undoped VO2 film, and this result induced a narrow hysteresis width in MIT performance. Furthermore, silicon doped VO2 films annealing in different temperature presented different phase transition properties. In the electrical, a higher annealing temperature resulted in a decrease of sheet resistance and lowering the transition temperature. In terahertz optical transmittance, silicon doped VO2 films keep an excellent modulation ratio, indicating a great potential in the application of terahertz modulator devices.
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Xuefei Wu, Xuefei Wu, Zhiming Wu, Zhiming Wu, Chunhui Ji, Chunhui Ji, Zehua Huang, Zehua Huang, Jun Gou, Jun Gou, Jun Wang, Jun Wang, Yadong Jiang, Yadong Jiang, } "THz transmittance and electrical properties of silicon doped vanadium dioxide films tuning by annealing temperature", Proc. SPIE 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices, 968603 (25 October 2016); doi: 10.1117/12.2242776; https://doi.org/10.1117/12.2242776
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