25 October 2016 Simulation of GaN/InGaN avalanche phototransistors
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Proceedings Volume 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices; 968609 (2016) https://doi.org/10.1117/12.2242566
Event: Eighth International Symposium on Advanced Optical Manufacturing and Testing Technology (AOMATT2016), 2016, Suzhou, China
Abstract
Physical simulation of a two-terminal typical avalanche phototransistor with a floating base (2T-APT) based on GaN/InGaN is reported. The simulated current characteristic is also compared with the experiment result. Under high voltages, the carriers multiply in the reverse-biased base-to-collector (BC) junction. To reduce the avalanche breakdown voltage, the doping concentration and the thickness of the base are discussed in detail. It is found that the lower voltage could be achieved by decreasing the doping concentration and the thickness of base. Those results could be explained theoretically by the electric field and the potential barrier in the emitter-to-base (EB) junction and the BC junction.
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Zhongliang Zhou, Min Zhu, Qi Wu, Shaohui Di, Tong Wang, Jun Chen, "Simulation of GaN/InGaN avalanche phototransistors", Proc. SPIE 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices, 968609 (25 October 2016); doi: 10.1117/12.2242566; https://doi.org/10.1117/12.2242566
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