25 October 2016 Simulation of GaN/InGaN avalanche phototransistors
Author Affiliations +
Proceedings Volume 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices; 968609 (2016) https://doi.org/10.1117/12.2242566
Event: Eighth International Symposium on Advanced Optical Manufacturing and Testing Technology (AOMATT2016), 2016, Suzhou, China
Abstract
Physical simulation of a two-terminal typical avalanche phototransistor with a floating base (2T-APT) based on GaN/InGaN is reported. The simulated current characteristic is also compared with the experiment result. Under high voltages, the carriers multiply in the reverse-biased base-to-collector (BC) junction. To reduce the avalanche breakdown voltage, the doping concentration and the thickness of the base are discussed in detail. It is found that the lower voltage could be achieved by decreasing the doping concentration and the thickness of base. Those results could be explained theoretically by the electric field and the potential barrier in the emitter-to-base (EB) junction and the BC junction.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhongliang Zhou, Zhongliang Zhou, Min Zhu, Min Zhu, Qi Wu, Qi Wu, Shaohui Di, Shaohui Di, Tong Wang, Tong Wang, Jun Chen, Jun Chen, } "Simulation of GaN/InGaN avalanche phototransistors", Proc. SPIE 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices, 968609 (25 October 2016); doi: 10.1117/12.2242566; https://doi.org/10.1117/12.2242566
PROCEEDINGS
6 PAGES


SHARE
RELATED CONTENT


Back to Top