25 October 2016 PSPICE simulation of transient characteristics of GaN based MSM structure UV detector grown by MBE
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Proceedings Volume 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices; 96860A (2016) https://doi.org/10.1117/12.2244817
Event: Eighth International Symposium on Advanced Optical Manufacturing and Testing Technology (AOMATT2016), 2016, Suzhou, China
Abstract
On the basis of optimizing the process conditions of molecular beam epitaxy (MBE), the GaN thin film with high quality was prepared by using sapphire (0001) vicinal substrate. HP-5000 type transistor characteristic tester was employed to measure the dark state current-voltage (I-V) characteristics of the GaN thin film metal–semiconductor–metal (MSM) structure grown on adjacent crystal surface by MBE. It was found that this kind of MSM structures had shown a rectifying contact characteristic. The dynamic photoconductive characteristics of the GaN based MSM structure and the transient photocurrent characteristics of the reverse bias diode were simulated by using PSPICE. The results showed that the transient photocurrent response time was in nanosecond level, under the condition of pulse width 800ps, wavelength 355nm light excitation.
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Xiangming Gao, Xiangming Gao, Shuo Wang, Shuo Wang, Hongxia Ran, Hongxia Ran, Ruifeng Liu, Ruifeng Liu, Jinshe Yuan, Jinshe Yuan, "PSPICE simulation of transient characteristics of GaN based MSM structure UV detector grown by MBE", Proc. SPIE 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices, 96860A (25 October 2016); doi: 10.1117/12.2244817; https://doi.org/10.1117/12.2244817
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