25 October 2016 Waveguide effect of Fe doped GaN alloy grown by MOCVD
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Proceedings Volume 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices; 96860B (2016) https://doi.org/10.1117/12.2245019
Event: Eighth International Symposium on Advanced Optical Manufacturing and Testing Technology (AOMATT2016), 2016, Suzhou, China
Abstract
The surface morphology and structural properties of Fe doped GaN alloy samples were analyzed by SPM9700 atomic force microscope and X LabXRD-6100 ray diffraction. The equivalent diameter of crystallite size was calculated to be 18nm according to the XRD data. The photoluminescence spectra of the samples were measured by 325nm continuous laser excitation at room temperature. The peaks position of the photoluminescence spectra of the samples was located at 450nm, 585nm and 665nm respectively. The waveguide effect was observed and analyzed. The peak wavelength of the waveguide is mainly in the 543nm. The results suggested significantly for further improvement of the performance of GaN based electronic devices and optoelectronic devices.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiangming Gao, Xiangming Gao, Wenqi Zheng, Wenqi Zheng, Tao Fan, Tao Fan, Yuyang Zhang, Yuyang Zhang, Jinshe Yuan, Jinshe Yuan, } "Waveguide effect of Fe doped GaN alloy grown by MOCVD", Proc. SPIE 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices, 96860B (25 October 2016); doi: 10.1117/12.2245019; https://doi.org/10.1117/12.2245019
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