25 October 2016 A room temperature terahertz photodetector based on In0.53Ga0.47As material
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Proceedings Volume 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices; 96860S (2016) https://doi.org/10.1117/12.2243863
Event: Eighth International Symposium on Advanced Optical Manufacturing and Testing Technology (AOMATT2016), 2016, Suzhou, China
Abstract
A terahertz photodetector was designed based on the novel room-temperature photoconductivity theory we proposed before. Prototype detectors with different sizes of photo-active area was fabricated on In0.53Ga0.47As material. Detectors' I-V property were tested, and signal response to a 0.0375THz source were measured. Results indicated that our detectors performed outstanding responsivity and respond speed. The room-temperature responsivity was estimated to be on the order of 104 V/W, the corresponding noise equivalent power (NEP) was estimated to be on the order of 10-12 W/Hz1/2, and the response time constant was calculated to be 1.06×10-5 S. Finally, our room-temperature photoconductivity theory was confirmed to be detectors’ respond mechanism via experiment and estimation.
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Yue Qu, Yue Qu, Wei Zhou, Wei Zhou, Niangjuan Yao, Niangjuan Yao, Zhiming Huang, Zhiming Huang, } "A room temperature terahertz photodetector based on In0.53Ga0.47As material", Proc. SPIE 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices, 96860S (25 October 2016); doi: 10.1117/12.2243863; https://doi.org/10.1117/12.2243863
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