25 October 2016 Fabrication and infrared absorption of tellurium doped silicon via femtosecond laser irradiation
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Proceedings Volume 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices; 96860Y (2016) https://doi.org/10.1117/12.2242176
Event: Eighth International Symposium on Advanced Optical Manufacturing and Testing Technology (AOMATT2016), 2016, Suzhou, China
Abstract
Doping silicon with chalcogens (S, Se, Te) via femtosecond-laser irradiation lead to increase the absorptance of Si in both visible and infrared region, so chalcogens doped silicon have great potential for use in Si-based optoelectronic devices. Tellurium doped silicon was fabricated by femtosecond-laser irradiation of Si with Si/Te bilayer films. The influence of distance between the sample surface and the laser focus in the process of fabricating micro-structured Si was studied. The results show that the sample surface cannot be located in focal plane, nor is far from the focal plane, suitable distance is necessary to produce regular columnar structure. And the surface structure of doped silicon is vitally important to high absorptance. In addition, we report the dependence of surface morphology and optical properties on scanning speed. The absorptance increases over the entire wavelength as the scanning speed decreases.
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Lingyan Du, Lingyan Du, Zhiming Wu, Zhiming Wu, Fei Tang, Fei Tang, Rui Li, Rui Li, Yadong Jiang, Yadong Jiang, } "Fabrication and infrared absorption of tellurium doped silicon via femtosecond laser irradiation", Proc. SPIE 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices, 96860Y (25 October 2016); doi: 10.1117/12.2242176; https://doi.org/10.1117/12.2242176
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