25 October 2016 The new high-speed switching study of ultra-short laser pulse technology
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Proceedings Volume 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices; 96860Z (2016) https://doi.org/10.1117/12.2242364
Event: Eighth International Symposium on Advanced Optical Manufacturing and Testing Technology (AOMATT2016), 2016, Suzhou, China
Abstract
Ultrafast phenomenon has presented widely in natural phenomenon and scientific and technological research. Therefore, study on ultrafast phenomenon is of great important in many research and technology fields. In recent years, the development and application of ultra-short laser pulse has been covered many areas. It has been developed into a powerful tool used to research ultrafast phenomena. In the implementation process of the ultra-short laser pulses, high-speed switching plays a vital role. The difficulty of high-speed switching design is to make the ultrafast electric pulse load on the both ends of the crystal with minimum distortion and delay. It is very difficult to switch electro-optic crystal at a high frequency in traditional method. In this paper, a new method is designed, which combined the electro-optic crystal and micro-strip line. The crystal is a part of the transmission path and the signal path of the micro-strip line is broadened or narrowed continuously to make the impedance matching to 50 ohm. The good match between pulse signal and the crystal make sure the high frequency switches of the crystal. The amplitude loss is less than 11%, and the delay is less than 1 nanosecond.
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Bo Sun, Bo Sun, Yongsheng Gou, Yongsheng Gou, Dahui Wang, Dahui Wang, Baiyu Liu, Baiyu Liu, Xueqing Zhao, Xueqing Zhao, Yonglin Bai, Yonglin Bai, } "The new high-speed switching study of ultra-short laser pulse technology", Proc. SPIE 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices, 96860Z (25 October 2016); doi: 10.1117/12.2242364; https://doi.org/10.1117/12.2242364
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