Paper
25 October 2016 Realizing white organic light emitting device with direct hole injection structure by manipulating electron transport
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Proceedings Volume 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices; 968610 (2016) https://doi.org/10.1117/12.2240162
Event: Eighth International Symposium on Advanced Optical Manufacturing and Testing Technology (AOMATT2016), 2016, Suzhou, China
Abstract
White organic light-emitting devices (WOLEDs) with a novel direct hole-injection structure based on the hole transport capability of bis[2-(4-tert-butylphenyl) benzothiazolato-N,C2'] iridium(acetylacetonate) [(t-bt)2I-r(acac)] were fabricated. By inserting an electron-blocking layer, we successfully manipulated electron transport and achieved white light emission. A maximum luminance of 26020 cd/m2, a maximum current efficiency of 22.37 cd/A and a maximum power efficiency of 18.99 lm/W were obtained. This novel structure can significantly simplify the production processes of WOLEDs and deserves further investigation.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhu Yunke, Biao Xu, Ping Wang, Cheng Hongxue, and Zhong Jian "Realizing white organic light emitting device with direct hole injection structure by manipulating electron transport", Proc. SPIE 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices, 968610 (25 October 2016); https://doi.org/10.1117/12.2240162
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KEYWORDS
Electron transport

Electron beam lithography

Organic light emitting diodes

Silver

Electroluminescence

Excitons

Doping

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