25 October 2016 Thermal strain and stress distribution of ZnTe/Si(211) and CdTe/Si(211) heterostructures
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Proceedings Volume 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices; 968619 (2016) https://doi.org/10.1117/12.2241737
Event: Eighth International Symposium on Advanced Optical Manufacturing and Testing Technology (AOMATT2016), 2016, Suzhou, China
Abstract
The model of mismatch strain and stress distribution considering the premise of the material anisotropy was made in this article. The strain and stress distribution and the radius of curvature of ZnTe/ Si (211) and CdTe/Si (211) heterostructures were calculated. The results showed that the strain and stress profiles and curvature radius of ZnTe/Si(211) and CdTe/Si(211) are asymmetric along in-plane direction [1-1-1] and [01-1]. The strains of epilayer and substrate are both negative at room temperature 293.15K. The stresses in ZnTe and CdTe epilayers are both tensile while in Si substrates are compressive on the side of interface and tensile on the other side. Compared with the ZnTe/Si (211) heterostructure, CdTe/Si (211) showed low stress and large curvature radius.
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Yuan-zhang Wang, "Thermal strain and stress distribution of ZnTe/Si(211) and CdTe/Si(211) heterostructures", Proc. SPIE 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices, 968619 (25 October 2016); doi: 10.1117/12.2241737; https://doi.org/10.1117/12.2241737
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