Paper
16 January 1989 Defect Centers Induced By Linear And Non-Linear Absorption Of UV Light In High Purity Silica
T. E. Tsai, D. L. Griscorn, E. J. Friebele
Author Affiliations +
Abstract
Defect centers induced by 6.4 eV laser light in high purity silica were studied by electron spin resonance (ESR). Both Si E' centers, and non-bridging oxygen hole centers (NBOHCs) were observed. However, the E' center was the dominant defect in type III synthetic silicas (1200 ppm OH), while the NBOHC was dominant in type IV silicas (< 5 ppm OH). Formyl radicals (HCO) and hydrogen-associated centers were also observed in high-water silica. The concentrations of both Si E' centers and NBOHCs were found to increase as the square of the 6.4 eV laser power suggesting that they are induced through non-linear absorption of UV light. By contrast, we find that the HCO concentration increases linearly at low laser power, saturates, and decreases at high power. Excitons induced by the non-linear absorption of UV light are inferred to be responsible for the generation of these observed defect centers in high purity silica.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. E. Tsai, D. L. Griscorn, and E. J. Friebele "Defect Centers Induced By Linear And Non-Linear Absorption Of UV Light In High Purity Silica", Proc. SPIE 0970, Properties and Characteristics of Optical Glass, (16 January 1989); https://doi.org/10.1117/12.948201
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Cited by 6 scholarly publications.
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KEYWORDS
Hydrogen

Photons

Silica

Absorption

Excitons

Silicon

Oxygen

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