16 March 2016 Solid-state lasers directly pumped by InGaN diode lasers: Ti:sapphire and Pr3+:LiYF4 lasers
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We report our recent progress of solid-state lasers, the titanium-doped sapphire laser and the praseodymium-doped LiYF4 (Pr3+:LiYF4) laser, directly pumped by InGaN diode lasers of green and blue. While the titanium-doped sapphire laser can be pumped by both blue and green diode lasers because of its broad absorption spectrum, we find 450-nm diode laser pumping inefficient for its power scaling owing to the onset of an additional absorption loss induced by the blue pump laser. The degradation of the performance of a Ti:sapphire laser induced by a 450-nm diode pumping is experimentally revealed. Furthermore, we demonstrate a passively mode-locked Ti:sapphire laser pumped by two green diode lasers of 1-W, and 74 fs pulses at a repetition rate of 120 MHz with an averaged output power of 45 mW are obtained. The Pr3+:LiYF4 laser, one of the most promising candidates as a visible laser, has become possible to be pumped directly by blue diode lasers of 440-nm wavelength. We demonstrate the power scaling at 523 and 640 nm oscillation, a passive Q-switching at 640 nm with a Cr4+:YAG saturable absorber by utilizing polarization-combined blue diode lasers as the pump source.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroki Tanaka, Hiroki Tanaka, Ryosuke Kariyama, Ryosuke Kariyama, Kodai Iijima, Kodai Iijima, Ryota Sawada, Ryota Sawada, Fumihiko Kannari, Fumihiko Kannari, } "Solid-state lasers directly pumped by InGaN diode lasers: Ti:sapphire and Pr3+:LiYF4 lasers", Proc. SPIE 9726, Solid State Lasers XXV: Technology and Devices, 97261X (16 March 2016); doi: 10.1117/12.2213815; https://doi.org/10.1117/12.2213815


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