Frequency conversion in free-standing periodically oriented gallium nitride

Christopher G. Brown; Steven R. Bowman; Jennifer K. Hite; Jaime A. Freitas; Francis J. Kub; Charles R. Eddy Jr.; Igor Vurgaftman; Jerry R. Meyer; Jacob H. Leach; Kevin Udwary

doi:10.1117/12.2213447

18 March 2016 Frequency conversion in free-standing periodically oriented gallium nitride

Christopher G. Brown, Steven R. Bowman, Jennifer K. Hite, Jaime A. Freitas, Francis J. Kub, Charles R. Eddy Jr., Igor Vurgaftman, Jerry R. Meyer, Jacob H. Leach, Kevin Udwary

Author Affiliations +

Proceedings Volume 9731, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications XV; 97310E (2016) https://doi.org/10.1117/12.2213447
Event: SPIE LASE, 2016, San Francisco, California, United States

Abstract

Gallium nitride’s (GaN) material properties of broadband transparency, high thermal conductivity, and wide-band gap make it a promising candidate for high-power frequency conversion devices. The strong internal polarization of GaN leads to large second-order nonlinearity, but conventional phase matching is prevented due to weak birefringence. To obtain efficient nonlinear optic frequency conversion, patterned inversion growth has been developed to induce quasiphase matching (QPM). We have fabricated and tested periodically oriented GaN (PO-GaN) devices to obtain QPM frequency conversion. This report discusses our recent measurements of second harmonic generation resonances for these devices.

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Christopher G. Brown, Steven R. Bowman, Jennifer K. Hite, Jaime A. Freitas, Francis J. Kub, Charles R. Eddy Jr., Igor Vurgaftman, Jerry R. Meyer, Jacob H. Leach, and Kevin Udwary "Frequency conversion in free-standing periodically oriented gallium nitride", Proc. SPIE 9731, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications XV, 97310E (18 March 2016); https://doi.org/10.1117/12.2213447

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