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18 March 2016 Frequency conversion in free-standing periodically oriented gallium nitride
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Gallium nitride’s (GaN) material properties of broadband transparency, high thermal conductivity, and wide-band gap make it a promising candidate for high-power frequency conversion devices. The strong internal polarization of GaN leads to large second-order nonlinearity, but conventional phase matching is prevented due to weak birefringence. To obtain efficient nonlinear optic frequency conversion, patterned inversion growth has been developed to induce quasiphase matching (QPM). We have fabricated and tested periodically oriented GaN (PO-GaN) devices to obtain QPM frequency conversion. This report discusses our recent measurements of second harmonic generation resonances for these devices.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christopher G. Brown, Steven R. Bowman, Jennifer K. Hite, Jaime A. Freitas, Francis J. Kub, Charles R. Eddy Jr., Igor Vurgaftman, Jerry R. Meyer, Jacob H. Leach, and Kevin Udwary "Frequency conversion in free-standing periodically oriented gallium nitride", Proc. SPIE 9731, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications XV, 97310E (18 March 2016);

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