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4 March 2016 Improved long wavelength 14xx and 19xx nm InGaAsp/InP lasers
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We report on our progress developing long wavelength high power laser diodes based on the InGaAsP/InP alloy system emitting in the range from 1400 to 2010 nm. Output power levels exceeding 50 Watts CW and 40% conversion efficiency were obtained at 1470 nm wavelength from 20% fill factor (FF) bars with 2 mm cavity length mounted on water cooled plates. Using these stackable plates we built a water cooled stack with 8 bars, successfully demonstrating 400 W at 1470 nm with good reliability. In all cases the maximum conversion efficiency was greater than 40% and the maximum power achievable was limited by thermal rollover. For lasers emitting in the range from 1930 to 2010 nm we achieved output power levels over 15 W and 20 % conversion efficiency from 20% FF bars with 2 mm cavity length on a conductively cooled platform. Life testing of the 1470 nm lasers bars over 14,000 hours under constant current mode has shown no significant degradation.
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T. Tanbun-Ek, R. Pathak, Z. Xu, H. Winhold, F. Zhou, M. Peters, D. Schleuning, and B. Acklin "Improved long wavelength 14xx and 19xx nm InGaAsp/InP lasers", Proc. SPIE 9733, High-Power Diode Laser Technology and Applications XIV, 973307 (4 March 2016);

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