10 March 2016 Ultrafast characterization of semiconductor gain and absorber devices for mode-locked VECSELs
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Abstract
We present a comprehensive characterization of semiconductor gain and absorber devices utilizing novel measurement techniques. Using a 20fs probe laser, a time resolution in the few femtosecond range is achieved in traditional pump and probe measurements performed on VECSELs and SESAMs. In-situ characterizations of VECSEL samples mode-locked in the sub-500fs regime reveal the fast and longtime recoveries of the gain present in real lasing conditions. Spectrally-resolved probing gives further information about the properties of carriers in VECSEL gain media. Our results indicate that stable mode-locked operation is sustained by multiple carrier relaxation mechanisms ranging from a few femtoseconds to the pico- and nanosecond regimes.
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Caleb Baker, Caleb Baker, Maik Scheller, Maik Scheller, Hwang-Jye Yang, Hwang-Jye Yang, Stephan W. Koch, Stephan W. Koch, Ronald J. Jones, Ronald J. Jones, Jerome V. Moloney, Jerome V. Moloney, Antje Ruiz Perez, Antje Ruiz Perez, Wolfgang Stolz, Wolfgang Stolz, Sadhvikas Addamane, Sadhvikas Addamane, Ganesh Balakrishnan, Ganesh Balakrishnan, "Ultrafast characterization of semiconductor gain and absorber devices for mode-locked VECSELs", Proc. SPIE 9734, Vertical External Cavity Surface Emitting Lasers (VECSELs) VI, 97340K (10 March 2016); doi: 10.1117/12.2213671; https://doi.org/10.1117/12.2213671
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