14 March 2016 Tailored femtosecond Bessel beams for high-throughput, taper-free through-silicon vias (TSVs) fabrication
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For higher-density integration and acceleration of operating speed in Si ICs, 3D integration of wafers and/or dies is essential. Fabrication of current 3D ICs relies on 3D assembly which electrically connects stacked chips to form a single circuit. A key technology for the 3D assembly is TSVs which are vertical electrical connections passing completely through silicon chips to electrically connect vertically assembled Si ICs. Typical TSVs have wide features, with diameters of a range from several microns to 50 μm and depths up to 500 μm with aspect ratios up to 15 depending on the application and integration scheme. In this work, we present high-throughput, taper-free TSVs fabrication using femtosecond Bessel beams operated at different wavelengths from 400 nm to 2.4 μm. Furthermore, special phase filters are designed to suppress the damages induced by the side-lobes of Bessel beams for high-quality TSVs fabrication. Our technique can be potentially used for 3D assembly in manufacture of 3D silicon integrated circuits.
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Fei He, Fei He, Junjie Yu, Junjie Yu, Wei Chu, Wei Chu, Zhaohui Wang, Zhaohui Wang, Yuanxin Tan, Yuanxin Tan, Ya Cheng, Ya Cheng, Koji Sugioka, Koji Sugioka, } "Tailored femtosecond Bessel beams for high-throughput, taper-free through-silicon vias (TSVs) fabrication", Proc. SPIE 9735, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXI, 973506 (14 March 2016); doi: 10.1117/12.2214694; https://doi.org/10.1117/12.2214694

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