14 March 2016 Observation of graphene growing process on SiC(0001) surface formed by KrF excimer-laser irradiation
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Abstract
Observation of graphene growing process on SiC(0001) step and terrace structure formed by direct laser patterning is proposed. We have proposed a novel method of direct growth of patterned graphene on SiC(0001) surfaces using KrF excimer-laser irradiation. KrF excimer-laser with a wavelength of 248 nm and a duration of 55 ns was used to graphene forming in this study. Laser irradiation was achieved with various laser fluenece. Grain size and number of layers of the graphene was varied by laser irradiation condition. Through conductive atomic force microscopy, it was observed that graphene grain expanded from (112 _ n) faced step area to (0001) faced terrace area in initial graphene growth process. From the result of the Raman spectroscopy, transmission electron microscopy and Conductive AFM, we summarized graphene growth process on SiC(0001) surfaces.
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Masakazu Hattori, Masakazu Hattori, Hiroshi Ikenoue, Hiroshi Ikenoue, Daisuke Nakamura, Daisuke Nakamura, Tatsuo Okada, Tatsuo Okada, } "Observation of graphene growing process on SiC(0001) surface formed by KrF excimer-laser irradiation", Proc. SPIE 9735, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXI, 97350Y (14 March 2016); doi: 10.1117/12.2211865; https://doi.org/10.1117/12.2211865
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