14 March 2016 High-efficiency bispectral laser source for EUV lithography
Author Affiliations +
Abstract
New concept of EUV radiation power scaling in the intermediate focus of the illumination system is proposed. The multiplex source scheme based on combination of several sources with acceptable level power allows to concentrate EUV light on the total power level of 1kW and more have been developed. The experimental results showed that the power consumption in the double-pulse bi-spectral primary source for EUV lithography can be substantially decrease by replacing pre-amplifiers in power CO2 laser on the SRS converters wavelength 1.06 μm to 10.6 μm while maintaining efficiency of EUV radiation output of illuminated plasma.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. P. Zhevlakov, A. P. Zhevlakov, R. P. Seisyan, R. P. Seisyan, V. G. Bespalov, V. G. Bespalov, V. V. Elizarov, V. V. Elizarov, A. S. Grishkanich, A. S. Grishkanich, S. V. Kascheev, S. V. Kascheev, "High-efficiency bispectral laser source for EUV lithography", Proc. SPIE 9735, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXI, 97351F (14 March 2016); doi: 10.1117/12.2214732; https://doi.org/10.1117/12.2214732
PROCEEDINGS
10 PAGES


SHARE
RELATED CONTENT

Performance of new high-power HVM LPP-EUV source
Proceedings of SPIE (March 17 2016)
Development of 250W EUV light source for HVM lithography
Proceedings of SPIE (February 21 2017)
High-efficiency bispectral laser for EUV
Proceedings of SPIE (May 11 2015)
High power sources for EUV lithography state of the...
Proceedings of SPIE (September 19 2004)

Back to Top