Direct laser fabrication of nanowires on semiconductor surfaces

Anahita Haghizadeh; Haeyeon Yang

doi:10.1117/12.2213955

9 March 2016 Direct laser fabrication of nanowires on semiconductor surfaces

Anahita Haghizadeh, Haeyeon Yang

Proceedings Volume 9737, Synthesis and Photonics of Nanoscale Materials XIII; 973703 (2016) https://doi.org/10.1117/12.2213955
Event: SPIE LASE, 2016, San Francisco, California, United States

Abstract

Periodic nanowires are observed from (001) orientation of Si and GaAs when the surfaces are irradiated interferentially by high power laser pulses. These nanowires are self-assembled and can be strain-free while their period is consistent with interference period. The nanowire morphologies are studied by atomic force microscopy. The observed period between nanowires depends on the wavelengths used and interference angle. The nanowire width increases with laser intensity. The narrowest nanowires observed have the width smaller than 20 nm, which is more than 10 times smaller than the interference period.

Citation Download Citation

Anahita Haghizadeh and Haeyeon Yang "Direct laser fabrication of nanowires on semiconductor surfaces", Proc. SPIE 9737, Synthesis and Photonics of Nanoscale Materials XIII, 973703 (9 March 2016); https://doi.org/10.1117/12.2213955

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