6 April 2016 Improvement in contact resistance of 4H-SiC by excimer laser doping using silicon nitride films
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Proceedings Volume 9738, Laser 3D Manufacturing III; 973803 (2016) https://doi.org/10.1117/12.2212021
Event: SPIE LASE, 2016, San Francisco, California, United States
We have proposed a novel method of low-temperature nitrogen doping into 4H-SiC(0001) induced by KrF excimer laser irradiation to a SiNx film. The SiNx film with a thickness of 100 nm was deposited on an n-type 4H-SiC(0001) substrate by chemical vapor deposition. Laser beam size on the sample surface was 300 μm×300 μm. Irradiation fluence was 1.0 J/cm2-4.0 J/cm2, and the number of shots was from 1 shot to 30 shots. Laser irradiation was performed in a vacuum chamber to avoid oxidation of the SiC surface. High concentration nitrogen doping (~1×1021 /cm3 at the surface) and very low contact resistance with ohmic I-V characteristics can be achieved by laser ablation of the SiNx film. In the case of laser irradiation at the fluence of 2.0 J/cm2, the SiNx film was almost ablated without laser ablation of the SiC substrate. Then, excellent ohmic contact characteristics was obtained at the irradiation number of 5 shots, and it was hardly deteriorated up to 30 shots. In the case of irradiation fluence above 3.0 J/cm2, ablation of the SiC substrates was induced and ohmic contact characteristics were deteriorated with increasing the number of shots. From these results, we conclude that excellent ohmic contact characteristics without irradiation damage to SiC substrates can be obtained in a stable.
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R. Kojima, R. Kojima, H. Ikenoue, H. Ikenoue, M. Suwa, M. Suwa, A. Ikeda, A. Ikeda, D. Nakamura, D. Nakamura, T. Asano, T. Asano, T. Okada, T. Okada, } "Improvement in contact resistance of 4H-SiC by excimer laser doping using silicon nitride films", Proc. SPIE 9738, Laser 3D Manufacturing III, 973803 (6 April 2016); doi: 10.1117/12.2212021; https://doi.org/10.1117/12.2212021


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