Dynamics of optically-injected semiconductor nanolasers

J.-M. Sarraute; K. Schires; S. LaRochelle; F. Grillot

doi:10.1117/12.2214492

4 March 2016 Dynamics of optically-injected semiconductor nanolasers

J.-M. Sarraute, K. Schires, S. LaRochelle, F. Grillot

Proceedings Volume 9742, Physics and Simulation of Optoelectronic Devices XXIV; 97420G (2016) https://doi.org/10.1117/12.2214492
Event: SPIE OPTO, 2016, San Francisco, California, United States

Abstract

We propose a novel rate equation model of an optically-injected semiconductor nanolaser based on an expression of the complex electric field including a novel spontaneous emission term. The latter takes into account the amplification of the zero-point energy of the field as well as the Purcell effect. The modulation response of the optically injection-locked nanolaser is studied for the first time using a small-signal analysis of the model. We then investigate the injection map of the nanolaser and study the 3-dB bandwidth of the nanolaser inside the locking region.

Citation Download Citation

J.-M. Sarraute, K. Schires, S. LaRochelle, and F. Grillot "Dynamics of optically-injected semiconductor nanolasers", Proc. SPIE 9742, Physics and Simulation of Optoelectronic Devices XXIV, 97420G (4 March 2016); https://doi.org/10.1117/12.2214492

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