4 March 2016 Dynamic model of pulsed laser generators based on multi-junction N-p-N-i-P heterostructures
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Abstract
This communication presents a dynamic model of a multi-junction heterostructure that combines the functions of a fast current switch and a high-efficiency laser emitter. Approaches to designing a multi-junction heterostructure with faster switching (rise and decay times of about 1 ns) and higher peak current (>10 A) are considered. It is shown that an important role is played in the dynamics of the injection drive currents of the laser part by the modulation by excess carriers in the lightly doped base and collector regions of the N-p-N transistor part. As a result, a field domain is formed, which serves as a virtual emitter of electrons and holes via impact ionization.
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Sergey Slipchenko, Sergey Slipchenko, Alexsandr Podoskin, Alexsandr Podoskin, Olga Soboleva, Olga Soboleva, Nikita Pikhtin, Nikita Pikhtin, Il'ya Tarasov, Il'ya Tarasov, Valentin Yuferev, Valentin Yuferev, } "Dynamic model of pulsed laser generators based on multi-junction N-p-N-i-P heterostructures", Proc. SPIE 9742, Physics and Simulation of Optoelectronic Devices XXIV, 97420I (4 March 2016); doi: 10.1117/12.2212583; https://doi.org/10.1117/12.2212583
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