4 March 2016 Study of electro-absorption effects in 1300nm In(Ga)As/GaAs quantum dot materials
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Abstract
We describe a study of electro-absorption effects in high quality 1300nm InAs/GaAs quantum dot (QD) material grown by molecular beam epitaxy. The photocurrent spectra as a function of electric field is investigated and the quantum confined Stark shift of the QD states is compared to reports for various quantum well (QW) systems (GaAs/AlGaAs, InGaAs/GaAs, InGaAsP/InP). We show that the rate of shift of the QD absorption peak is smaller than that of the reported QW systems (~0.1 meV/kVcm-1 c.f. 0.15-0.2 meV/kVcm- 1) and that the QD ground-state absorption is comparatively insensitive to the applied electric field. We observe a strong QD absorption peak at all biases up to avalanche breakdown, which is not observed in previous reports for these QW systems.
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S. A. Sobhani, S. A. Sobhani, D. T. Childs, D. T. Childs, N. Babazadeh, N. Babazadeh, B. J. Stevens, B. J. Stevens, K. Nishi, K. Nishi, M. Sugawara, M. Sugawara, K. Takemasa, K. Takemasa, R. A. Hogg, R. A. Hogg, "Study of electro-absorption effects in 1300nm In(Ga)As/GaAs quantum dot materials", Proc. SPIE 9742, Physics and Simulation of Optoelectronic Devices XXIV, 97420S (4 March 2016); doi: 10.1117/12.2213187; https://doi.org/10.1117/12.2213187
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