4 March 2016 Pushing the limits of silicon transistors
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Abstract
In this work we study Ge transistor structures grown on silicon substrate. We use photoluminescence to determine the band gap of Ge under tensile strain. The strain is induced by growing Ge on an InGaAs buffer layer with variable In content. The band energy levels are modeled using a 30 band k·p model based on first principles calculations. Photoluminescence measurements show a reasonable correspondence with calculated values of the band energies.
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Dzianis Saladukha, Dzianis Saladukha, Tomasz J. Ochalski, Tomasz J. Ochalski, Felipe Murphy-Armando, Felipe Murphy-Armando, Michael B. Clavel, Michael B. Clavel, Mantu K. Hudait, Mantu K. Hudait, } "Pushing the limits of silicon transistors", Proc. SPIE 9742, Physics and Simulation of Optoelectronic Devices XXIV, 974211 (4 March 2016); doi: 10.1117/12.2209606; https://doi.org/10.1117/12.2209606
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