Translator Disclaimer
4 March 2016 Theoretical investigations of optical properties of Ga(In)AsBi quantum well systems using 8-band and 14-band models
Author Affiliations +
Abstract
We report on possible consequences of alloying of GaAs with GaBi or InBi on band structure and material gain of quantum wells. Typical considered structure consists of 8nm wide GaAsBi quantum well on GaAs substrate. Our analysis is performed using 8-band and 14-band kp models. The obtained results indicate that for GaInAsBi/InP quantum well with 5% of Bi it might be possible to achieve emission wavelengths around 4 μm .
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Gladysiewicz, I. Ivashev, and M. S. Wartak "Theoretical investigations of optical properties of Ga(In)AsBi quantum well systems using 8-band and 14-band models", Proc. SPIE 9742, Physics and Simulation of Optoelectronic Devices XXIV, 974218 (4 March 2016); https://doi.org/10.1117/12.2208366
PROCEEDINGS
8 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT


Back to Top