4 March 2016 Influence of p-doping on the gain and refractive index dynamics in quantum dash based semiconductor optical amplifiers
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Abstract
This work presents an investigation of room temperature ultra-fast carrier dynamics in a p-doped dash-in-a-well structure emitting at 1.5 μm using single colour heterodyne pump-probe spectroscopy. This technique enabled simultaneous access to the gain and refractive index dynamics in various operational conditions including both the absorption and gain regime. Comprehensive analysis of the timescales related to carrier relaxation and escape processes in addition to the ’dynamical’ linewidth enhancement factor are presented and compared with results obtained from similar un-doped materials. The direct influence of the p-doping on the carrier dynamics is also discussed.
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Katarzyna Komolibus, Tomasz Piwonski, Siddharth Joshi, Nicolas Chimot, John Houlihan, Francois Lelarge, Guillaume Huyet, "Influence of p-doping on the gain and refractive index dynamics in quantum dash based semiconductor optical amplifiers", Proc. SPIE 9742, Physics and Simulation of Optoelectronic Devices XXIV, 974219 (4 March 2016); doi: 10.1117/12.2212867; https://doi.org/10.1117/12.2212867
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