4 March 2016 Absorption enhancement by textured InP in solar cells
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Abstract
III-V compound semiconductors seem to be the ideal materials for photovoltaic devices because they exhibit fast carrier velocity. III-V compound semiconductors, however, are unfavorable materials to be commercialized on large scale photovoltaic devices because of their high material cost. The textured surface shows the potential to increase the performance of solar cells because of the properties such as high absorption and longer light path length. These properties can overcome the disadvantage of the III-V compound semiconductors through thin thickness use when producing solar cells. In this study, we demonstrate that textured surfaces on InP formed by nano-sphere lithography and plasma etching process can enhance the absorption effectively in comparison with planar surface. The power conversion efficiency of InP solar cells using the textured InP and the aluminum doped zinc oxide was achieved up to 8%.
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Seokhun Yun, Taeksoo Ji, "Absorption enhancement by textured InP in solar cells", Proc. SPIE 9742, Physics and Simulation of Optoelectronic Devices XXIV, 97421Q (4 March 2016); doi: 10.1117/12.2212082; https://doi.org/10.1117/12.2212082
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