14 March 2016 Enhanced photocarrier extraction mechanisms in ultra-thin photovoltaic GaAs n/p junctions
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PV devices with active areas of ~3:4 mm2 were fabricated and tested with top electrodes having different emitter gridline spacings with active area shadowing values between 0% and 1.8%. As expected, the thicker n/p junctions exhibit hindered photocarrier extraction, with low fill factor (FF) values, for devices prepared with sparse gridline designs. However, this study clearly demonstrates that for thin n/p junctions photocarrier extraction can still be efficient (FF > 80%) even for devices with no gridlines, which we explain using a TCAD model. The electric field profiles of devices with and without hindered photocarrier extraction are also discussed.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mark C. A. York, Mark C. A. York, Francine Proulx, Francine Proulx, Denis P. Masson, Denis P. Masson, Abdelatif Jaouad, Abdelatif Jaouad, Boussairi Bouzazi, Boussairi Bouzazi, Richard Arès, Richard Arès, Vincent Aimez, Vincent Aimez, Simon Fafard, Simon Fafard, } "Enhanced photocarrier extraction mechanisms in ultra-thin photovoltaic GaAs n/p junctions", Proc. SPIE 9743, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V, 97430Y (14 March 2016); doi: 10.1117/12.2212960; https://doi.org/10.1117/12.2212960

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