14 March 2016 Enhanced photocarrier extraction mechanisms in ultra-thin photovoltaic GaAs n/p junctions
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PV devices with active areas of ~3:4 mm2 were fabricated and tested with top electrodes having different emitter gridline spacings with active area shadowing values between 0% and 1.8%. As expected, the thicker n/p junctions exhibit hindered photocarrier extraction, with low fill factor (FF) values, for devices prepared with sparse gridline designs. However, this study clearly demonstrates that for thin n/p junctions photocarrier extraction can still be efficient (FF > 80%) even for devices with no gridlines, which we explain using a TCAD model. The electric field profiles of devices with and without hindered photocarrier extraction are also discussed.
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Mark C. A. York, Francine Proulx, Denis P. Masson, Abdelatif Jaouad, Boussairi Bouzazi, Richard Arès, Vincent Aimez, Simon Fafard, "Enhanced photocarrier extraction mechanisms in ultra-thin photovoltaic GaAs n/p junctions", Proc. SPIE 9743, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V, 97430Y (14 March 2016); doi: 10.1117/12.2212960; https://doi.org/10.1117/12.2212960

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