24 February 2016 Mid-IR gain media based on transition metal-doped II-VI chalcogenides
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Proceedings Volume 9744, Optical Components and Materials XIII; 97440A (2016) https://doi.org/10.1117/12.2212822
Event: SPIE OPTO, 2016, San Francisco, California, United States
Abstract
Progress in fabrication and mid-IR lasing of Cr and Fe thermal-diffusion and radiation enhanced thermal diffusion doped II-VI binary and ternary polycrystals is reported. We demonstrate novel design of mid-IR Fe:ZnSe and Cr:ZnSe/S solid state lasers with significant improvement of output average power up to 35W@4.1 μm and 57W@2.5 μm and 20W@2.94 μm. We report significantly improved output characteristics of polycrystalline Cr:ZnS/Se lasers in gain-switched regime: 16 mJ at 200 Hz, pulse duration 5 ns with tunability over 2400-3000 nm as well as Kerr-Lens-Mode-Locked regime in terms of average power (up to 2 W), peak power and pulse energy (0.5 MW and 24 nJ, respectively), and pulse duration (less than 29 fs).
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S. B. Mirov, S. B. Mirov, V. V. Fedorov, V. V. Fedorov, D. V. Martyshkin, D. V. Martyshkin, I. S. Moskalev, I. S. Moskalev, M. S. Mirov, M. S. Mirov, O. Gafarov, O. Gafarov, A. Martinez, A. Martinez, J. Peppers, J. Peppers, V. Smolski, V. Smolski, S. Vasilyev, S. Vasilyev, V. Gapontsev, V. Gapontsev, "Mid-IR gain media based on transition metal-doped II-VI chalcogenides", Proc. SPIE 9744, Optical Components and Materials XIII, 97440A (24 February 2016); doi: 10.1117/12.2212822; https://doi.org/10.1117/12.2212822
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