25 February 2016 Low-bias gate tunable terahertz plasmonic signatures in chemical vapour deposited graphene of varying grain size
Author Affiliations +
Abstract
We report the characterization of centimeter sized graphene field-effect transistors with ionic gating which enables active frequency and amplitude modulation of terahertz (THz) radiation. Chemical vapour deposited graphene with different grain sizes were studied using THz time-domain spectroscopy. We demonstrate that the plasmonic resonances intrinsic to graphene can be tuned over a wide range of THz frequencies by engineering the grain size of the graphene. Further frequency tuning of the resonance, up to ~65 GHz, is achieved by electrostatic doping via ionic gating. These results present the first demonstration of tuning the intrinsic plasmonic resonances in graphene.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Varun S. Kamboj, Philipp Braeuninger-Weimer, Piran R. Kidambi, David S. Jessop, Angadjit Singh, Juraj Sibik, Yuan Ren, Stephan Hofmann, J. Axel Zeitler, Harvey E. Beere, David A. Ritchie, "Low-bias gate tunable terahertz plasmonic signatures in chemical vapour deposited graphene of varying grain size", Proc. SPIE 9747, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX, 974707 (25 February 2016); doi: 10.1117/12.2209724; https://doi.org/10.1117/12.2209724
PROCEEDINGS
8 PAGES


SHARE
Back to Top