25 February 2016 Low-bias gate tunable terahertz plasmonic signatures in chemical vapour deposited graphene of varying grain size
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Abstract
We report the characterization of centimeter sized graphene field-effect transistors with ionic gating which enables active frequency and amplitude modulation of terahertz (THz) radiation. Chemical vapour deposited graphene with different grain sizes were studied using THz time-domain spectroscopy. We demonstrate that the plasmonic resonances intrinsic to graphene can be tuned over a wide range of THz frequencies by engineering the grain size of the graphene. Further frequency tuning of the resonance, up to ~65 GHz, is achieved by electrostatic doping via ionic gating. These results present the first demonstration of tuning the intrinsic plasmonic resonances in graphene.
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Varun S. Kamboj, Varun S. Kamboj, Philipp Braeuninger-Weimer, Philipp Braeuninger-Weimer, Piran R. Kidambi, Piran R. Kidambi, David S. Jessop, David S. Jessop, Angadjit Singh, Angadjit Singh, Juraj Sibik, Juraj Sibik, Yuan Ren, Yuan Ren, Stephan Hofmann, Stephan Hofmann, J. Axel Zeitler, J. Axel Zeitler, Harvey E. Beere, Harvey E. Beere, David A. Ritchie, David A. Ritchie, } "Low-bias gate tunable terahertz plasmonic signatures in chemical vapour deposited graphene of varying grain size", Proc. SPIE 9747, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX, 974707 (25 February 2016); doi: 10.1117/12.2209724; https://doi.org/10.1117/12.2209724
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