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25 February 2016 High-efficiency W-band hybrid integrated photoreceiver module using UTC-PD and pHEMT amplifier
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Abstract
A 100-GHz narrowband photoreceiver module integrated with a zero-bias operational uni-traveling-carrier photodiode (UTC-PD) and a GaAs-based pseudomorphic high-electron-mobility transistor (pHEMT) amplifier was fabricated and characterized. Both devices exhibited flat frequency response and outstanding overall performance. The UTC-PD showed a 3-dB bandwidth beyond 110 GHz while the pHEMT amplifier featured low power consumption and a gain of 24 dB over the 85-100 GHz range. A butterfly metal package equipped with a 1.0 mm (W) coaxial connector and a microstrip-coplanar waveguide conversion substrate was designed for low insertion loss and low return loss. The fabricated photoreceiver module demonstrated high conversion gain, a maximum output power of +9.5 dBm at 96 GHz, and DC-power consumption of 0.21 W.
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T. Umezawa, K. Katshima, A. Kanno, K. Akahane, A. Matsumoto, N. Yamamoto, and T. Kawanishi "High-efficiency W-band hybrid integrated photoreceiver module using UTC-PD and pHEMT amplifier", Proc. SPIE 9747, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX, 97470D (25 February 2016); https://doi.org/10.1117/12.2209735
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