2 May 2016 Photoconductive antennas based on low temperature grown GaAs on silicon substrates for broadband terahertz generation and detection
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Abstract
We present investigations of photoconductive antennas (PCA) based on low temperature grown GaAs (LT GaAs) on silicon substrates for terahertz (THz) generation and detection. The PCAs consist of 2 μm thick layers of LT GaAs grown on a high resistivity silicon substrate in order to reduce the intrinsic absorption losses around 8 THz due to a strong phonon resonance in GaAs. Using 20 fs long pump pulses around 800 nm and dipole antennas with dipole lengths between 20 μm and 60 μm a maximum bandwidth up to 12 THz and a maximum dynamic range exceeding 90 dB at 0.5 THz were obtained. The average output power was measured with a calibrated detector to be 95 μW at a repetition rate of 80 MHz.
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M. Klos, R. Bartholdt, J. Klier, J.-F. Lampin, R. Beigang, "Photoconductive antennas based on low temperature grown GaAs on silicon substrates for broadband terahertz generation and detection", Proc. SPIE 9747, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX, 974712 (2 May 2016); doi: 10.1117/12.2217505; https://doi.org/10.1117/12.2217505
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