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26 February 2016 Heteroepitaxial growth of cubic boron nitride films on diamond(001) substrates and their n-type doping
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Abstract
This paper firstly introduces c-BN in general and its excellent properties that make c-BN a promising candidate competing with diamond as hard coating and as a future high temperature semiconductor material. Furthermore, this paper gives an overview of the recent advances of the different synthetic techniques towards the heteroepitaxial growth of c-BN films. In the end, it will describe the state of the art of n-type doping of these c-BN epitaxial films through which a c-BN/diamond pn diode can be anticipated.
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Hong Yin "Heteroepitaxial growth of cubic boron nitride films on diamond(001) substrates and their n-type doping", Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 974805 (26 February 2016); https://doi.org/10.1117/12.2208392
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