HVPE-GaN growth on GaN-based Advanced Aubstrates by Smart Cut

Malgorzata Iwinska; Mikolaj Amilusik; Michal Fijalkowski; Tomasz Sochacki; Boleslaw Lucznik; Ewa Grzanka; Elzbieta Litwin-Staszewska; Anna Nowakowska-Siwinska; Izabella Grzegory; Eric Guiot; Raphael Caulmilone; Martin Seiss; Tobias Mrotzek; Michal Bockowski

doi:10.1117/12.2208854

26 February 2016 HVPE-GaN growth on GaN-based advanced substrates by Smart Cut^TM

Malgorzata Iwinska, Mikolaj Amilusik, Michal Fijalkowski, Tomasz Sochacki, Boleslaw Lucznik, Ewa Grzanka, Elzbieta Litwin-Staszewska, Anna Nowakowska-Siwinska, Izabella Grzegory, Eric Guiot, Raphael Caulmilone, Martin Seiss, Tobias Mrotzek, Michal Bockowski

Author Affiliations +

Proceedings Volume 9748, Gallium Nitride Materials and Devices XI; 974809 (2016) https://doi.org/10.1117/12.2208854
Event: SPIE OPTO, 2016, San Francisco, California, United States

Abstract

Advanced Substrates consist of a 200-nm-thick GaN layer bonded to a handler wafer. The thin layer is separated from source material by Smart Cut^TM technology. GaN on Sapphire Advanced Substrates were used as seeds in HVPE-GaN growth. Unintentionally doped and silicon-doped GaN layers were crystallized. Free-standing HVPE-GaN was characterized by X-ray diffraction, defect selective etching, photo-etching, Hall method, Raman spectroscopy, and secondary ion mass spectrometry. The results were compared to HVPE-GaN grown on standard MOCVD-GaN/sapphire templates.

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Malgorzata Iwinska, Mikolaj Amilusik, Michal Fijalkowski, Tomasz Sochacki, Boleslaw Lucznik, Ewa Grzanka, Elzbieta Litwin-Staszewska, Anna Nowakowska-Siwinska, Izabella Grzegory, Eric Guiot, Raphael Caulmilone, Martin Seiss, Tobias Mrotzek, and Michal Bockowski "HVPE-GaN growth on GaN-based advanced substrates by Smart Cut^TM", Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 974809 (26 February 2016); https://doi.org/10.1117/12.2208854

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