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26 February 2016 HVPE-GaN growth on GaN-based advanced substrates by Smart CutTM
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Abstract
Advanced Substrates consist of a 200-nm-thick GaN layer bonded to a handler wafer. The thin layer is separated from source material by Smart CutTM technology. GaN on Sapphire Advanced Substrates were used as seeds in HVPE-GaN growth. Unintentionally doped and silicon-doped GaN layers were crystallized. Free-standing HVPE-GaN was characterized by X-ray diffraction, defect selective etching, photo-etching, Hall method, Raman spectroscopy, and secondary ion mass spectrometry. The results were compared to HVPE-GaN grown on standard MOCVD-GaN/sapphire templates.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Malgorzata Iwinska, Mikolaj Amilusik, Michal Fijalkowski, Tomasz Sochacki, Boleslaw Lucznik, Ewa Grzanka, Elzbieta Litwin-Staszewska, Anna Nowakowska-Siwinska, Izabella Grzegory, Eric Guiot, Raphael Caulmilone, Martin Seiss, Tobias Mrotzek, and Michal Bockowski "HVPE-GaN growth on GaN-based advanced substrates by Smart CutTM", Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 974809 (26 February 2016); https://doi.org/10.1117/12.2208854
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