26 February 2016 Influence of vacancies on GaN/AlN interface characteristics
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Abstract
The results of the influence of point defects (vacancy with interstitial atom) on the GaN/AlN heterointerface is presented. It was ascertained that presence of Al atom vacancy in the heterointerface leads to the contacting layer atoms rearrangement. The presence of N atom vacancy does not influence on the contacting Ga and Al layers intermixing.
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Yahor V. Lebiadok, Yahor V. Lebiadok, Tatyana V. Bezyazychnaya, Tatyana V. Bezyazychnaya, Dzmitri M. Kabanau, Dzmitri M. Kabanau, Gennadii I. Ryabtsev, Gennadii I. Ryabtsev, Konstantin S. Zhuravlev, Konstantin S. Zhuravlev, } "Influence of vacancies on GaN/AlN interface characteristics", Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 97480W (26 February 2016); doi: 10.1117/12.2211195; https://doi.org/10.1117/12.2211195
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