Interface control technologies for high-power GaN transistors: Self-stopping etching of p-GaN layers utilizing electrochemical reactions

Taketomo Sato; Yusuke Kumazaki; Masaaki Edamoto; Masamichi Akazawa; Tamotsu Hashizume

doi:10.1117/12.2211964

Translator Disclaimer

26 February 2016 Interface control technologies for high-power GaN transistors: Self-stopping etching of p-GaN layers utilizing electrochemical reactions

Taketomo Sato, Yusuke Kumazaki, Masaaki Edamoto, Masamichi Akazawa, Tamotsu Hashizume

Author Affiliations +

Proceedings Volume 9748, Gallium Nitride Materials and Devices XI; 97480Y (2016) https://doi.org/10.1117/12.2211964
Event: SPIE OPTO, 2016, San Francisco, California, United States

Abstract

The selective and low-damaged etching of p-type GaN or AlGaN layer is inevitable process for AlGaN/GaN high-power transistors. We have investigated an electrochemical etching of p-GaN layer grown on AlGaN/GaN heterostructures, consisting of an anodic oxidation of p-GaN surface and a subsequent dissolution of the resulting oxide. The p-GaN layer was electrochemically etched by following the pattern of the SiO₂ film that acted as an etching mask. Etching depth was linearly controlled by cycle number of triangular waveform at a rate of 25 nm/cycle. The AFM, TEM and μ-AES results showed that the top p-GaN layer was completely removed after 5 cycles applied, and the etching reaction was automatically sopped on the AlGaN surface. I-V and C-V measurements revealed that no significant damages were induced in the AlGaN/GaN heterostructures.

Citation Download Citation

Taketomo Sato, Yusuke Kumazaki, Masaaki Edamoto, Masamichi Akazawa, and Tamotsu Hashizume "Interface control technologies for high-power GaN transistors: Self-stopping etching of p-GaN layers utilizing electrochemical reactions", Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 97480Y (26 February 2016); https://doi.org/10.1117/12.2211964

ACCESS THE FULL ARTICLE