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26 February 2016 Interface control technologies for high-power GaN transistors: Self-stopping etching of p-GaN layers utilizing electrochemical reactions
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Abstract
The selective and low-damaged etching of p-type GaN or AlGaN layer is inevitable process for AlGaN/GaN high-power transistors. We have investigated an electrochemical etching of p-GaN layer grown on AlGaN/GaN heterostructures, consisting of an anodic oxidation of p-GaN surface and a subsequent dissolution of the resulting oxide. The p-GaN layer was electrochemically etched by following the pattern of the SiO2 film that acted as an etching mask. Etching depth was linearly controlled by cycle number of triangular waveform at a rate of 25 nm/cycle. The AFM, TEM and μ-AES results showed that the top p-GaN layer was completely removed after 5 cycles applied, and the etching reaction was automatically sopped on the AlGaN surface. I-V and C-V measurements revealed that no significant damages were induced in the AlGaN/GaN heterostructures.
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Taketomo Sato, Yusuke Kumazaki, Masaaki Edamoto, Masamichi Akazawa, and Tamotsu Hashizume "Interface control technologies for high-power GaN transistors: Self-stopping etching of p-GaN layers utilizing electrochemical reactions", Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 97480Y (26 February 2016); https://doi.org/10.1117/12.2211964
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