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26 February 2016 Development for ultraviolet vertical cavity surface emitting lasers
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We report our current development progress of ultraviolet vertical-cavity surface-emitting lasers, which included the development of an electrically conducting n-DBR consisting of 40-pairs of Si-doped quarter-wavelength layers of Al0.12Ga0.88N and GaN. A peak reflectivity of 91.6% at 368 nm was measured and a series resistance of 17.7Ω was extracted near the maximum measured current of 100 mA. Furthermore, a micro-cavity light emitting diode was demonstrated by utilizing the established n-DBR. A 2λ cavity was subsequently grown on the 40-pair Al0.12Ga0.88N/GaN n-DBR and a peak wavelength of 371.4 nm was observed with spectral linewidth of 5.8 nm.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuh-Shiuan Liu, Tsung-Ting Kao, Karan Mehta, Shyh-Chiang Shen, P. Douglas Yoder, Theeradetch Detchprohm, Russell D. Dupuis, Hongen Xie, and Fernando A. Ponce "Development for ultraviolet vertical cavity surface emitting lasers", Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 974815 (26 February 2016);


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