Paper
26 February 2016 Continuous wave operation of high power GaN-based blue vertical-cavity surface-emitting lasers using epitaxial lateral overgrowth
Tatsushi Hamaguchi, Noriyuki Fuutagawa, Shouichiro Izumi, Masahiro Murayama, Hironobu Narui
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Abstract
We have succeeded in achieving continuous-wave operation of gallium nitride (GaN) based vertical-cavity surfaceemitting lasers (VCSELs), which was fabricated by epitaxial lateral overgrowth (ELO) using dielectric distributed Bragg reflectors(DBRs) as masks for selective growth. The device exhibited CW operation at a wavelength of 453.9nm. The maximum output power was 1.1 mW, which is the highest value reported in previously published articles. The ELO process used for this study represents a breakthrough for challenges which were indicated by other former reports for GaN-based VCSELs and is suitable for mass production.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tatsushi Hamaguchi, Noriyuki Fuutagawa, Shouichiro Izumi, Masahiro Murayama, and Hironobu Narui "Continuous wave operation of high power GaN-based blue vertical-cavity surface-emitting lasers using epitaxial lateral overgrowth", Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 974817 (26 February 2016); https://doi.org/10.1117/12.2207222
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Cited by 5 scholarly publications.
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KEYWORDS
Vertical cavity surface emitting lasers

Epitaxial lateral overgrowth

Gallium nitride

Continuous wave operation

Reflectivity

Dielectrics

High power lasers

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