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26 February 2016 AlGaInN laser diode technology for systems applications
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Abstract
Gallium Nitride (GaN) laser diodes fabricated from the AlGaInN material system is an emerging technology that allows laser diodes to be fabricated over a very wide wavelength range from u.v. to the visible, and is a key enabler for the development of new system applications such as (underwater and terrestrial) telecommunications, quantum technologies, display sources and medical instrumentation.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. P. Najda, P. Perlin, T. Suski, L. Marona, M. Bockowski, M. Leszczyński, P. Wisniewski, R. Czernecki, R. Kucharski, G. Targowski, S. Watson, and A. E. Kelly "AlGaInN laser diode technology for systems applications", Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 974819 (26 February 2016); https://doi.org/10.1117/12.2207231
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