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26 February 2016 AlGaInN laser diode technology for systems applications
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Gallium Nitride (GaN) laser diodes fabricated from the AlGaInN material system is an emerging technology that allows laser diodes to be fabricated over a very wide wavelength range from u.v. to the visible, and is a key enabler for the development of new system applications such as (underwater and terrestrial) telecommunications, quantum technologies, display sources and medical instrumentation.
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S. P. Najda, P. Perlin, T. Suski, L. Marona, M. Bockowski, M. Leszczyński, P. Wisniewski, R. Czernecki, R. Kucharski, G. Targowski, S. Watson, and A. E. Kelly "AlGaInN laser diode technology for systems applications", Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 974819 (26 February 2016);

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