26 February 2016 Determination of internal quantum efficiency in GaN by simultaneous measurements of photoluminescence and photo-acoustic signals
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Abstract
Internal quantum efficiency (IQE) is usually estimated from temperature dependence of photoluminescence (PL) intensity by assuming that the IQE at cryogenic temperature is unity. III-nitride samples, however, usually have large defect-density, and the assumption is not necessarily valid. In this study, we developed a new method to estimate accurate IQE values by simultaneous PL and photo-acoustic (PA) measurements, and demonstratively evaluated the IQE values for various GaN samples. The results show that the conventional method cannot give accurate IQE values for low-quality samples although it can be valid for high-quality samples, and that our method can always give accurate values.
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T. Nakano, K. Kawakami, A. A. Yamaguchi, "Determination of internal quantum efficiency in GaN by simultaneous measurements of photoluminescence and photo-acoustic signals", Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 97481W (26 February 2016); doi: 10.1117/12.2212243; https://doi.org/10.1117/12.2212243
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