26 February 2016 Enhancement of indium incorporation to InGaN MQWs on AlN/GaN periodic multilayers
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Abstract
The effect of compressive strain in buffer layer on strain relaxation and indium incorporation in InGaN multi-quantum wells (MQWs) is studied for two sets of samples grown side by side on both relaxed GaN layers and strained 10-pairs of AlN/GaN periodic multilayers. The 14-nm AlN layers were utilized in both multilayers, while GaN thickness was 4.5 and 2.5 nm in the first and the second set, respectively. The obtained results for the InGaN active layers on relaxed GaN and AlN/GaN periodic multilayers indicate enhanced indium incorporation for more relaxed InGaN active layers providing a variety of emission colors from purple to green.
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Morteza Monavarian, Morteza Monavarian, Shopan Hafiz, Shopan Hafiz, Saikat Das, Saikat Das, Natalia Izyumskaya, Natalia Izyumskaya, Ümit Özgür, Ümit Özgür, Hadis Morkoç, Hadis Morkoç, Vitaliy Avrutin, Vitaliy Avrutin, } "Enhancement of indium incorporation to InGaN MQWs on AlN/GaN periodic multilayers", Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 974825 (26 February 2016); doi: 10.1117/12.2213777; https://doi.org/10.1117/12.2213777
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