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26 February 2016 Exciton localization in (11-22)-oriented semi-polar InGaN multiple quantum wells
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Excitonic recombination dynamics in (11-22) -oriented semipolar In0.2Ga0.8N/In0.06Ga0.94N multiquantum wells (MQWs) grown on GaN/m-sapphire templates have been investigated by temperature-dependent time-resolved photoluminescence (TRPL). The radiative and nonradiative recombination contributions to the PL intensity at different temperatures were evaluated by analysing temperature dependences of PL peak intensity and decay times. The obtained data indicate the existence of exciton localization with a localization energy of Eloc(15K) =7meV and delocalization temperature of Tdeloc = 200K in the semipolar InGaN MQWs. Presence of such exciton localization in semipolar (11-22) -oriented structures could lead to improvement of excitonic emission and internal quantum efficiency.
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Morteza Monavarian, Daniel Rosales, Bernard Gil, Natalia Izyumskaya, Saikat Das, Ümit Özgür, Hadis Morkoç, and Vitaliy Avrutin "Exciton localization in (11-22)-oriented semi-polar InGaN multiple quantum wells", Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 974826 (26 February 2016);

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