26 February 2016 Wurtzite/zinc-blende electronic-band alignment in basal-plane stacking faults in semi-polar GaN
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Abstract
Heteroepitaxial semipolar and nonpolar GaN layers often suffer from high densities of extended defects including basal plane stacking faults (BSFs). BSFs which are considered as inclusions of cubic zinc-blende phase in wurtzite matrix act as quantum wells strongly affecting device performance. Band alignment in BSFs has been discussed as type of band alignment at the wurtzite/zinc blende interface governs the response in differential transmission; fast decay after the pulse followed by slow recovery due to spatial splitting of electrons and heavy holes for type- II band alignment in contrast to decay with no recovery in case of type I band alignment. Based on the results, band alignment is demonstrated to be of type II in zinc-blende segments in wurtzite matrix as in BSFs.
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Morteza Monavarian, Morteza Monavarian, Shopan Hafiz, Shopan Hafiz, Natalia Izyumskaya, Natalia Izyumskaya, Saikat Das, Saikat Das, Ümit Özgür, Ümit Özgür, Hadis Morkoç, Hadis Morkoç, Vitaliy Avrutin, Vitaliy Avrutin, } "Wurtzite/zinc-blende electronic-band alignment in basal-plane stacking faults in semi-polar GaN ", Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 974827 (26 February 2016); doi: 10.1117/12.2213859; https://doi.org/10.1117/12.2213859
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