Efficient light emission from hybrid inorganic/organic semiconductor structures by energy level optimization

R. Schlesinger; F. Bianchi; S. Blumstengel; Björn Kobin; K. Moudgil; S. Barlow; S. Hecht; S. R. Marder; N. Koch

doi:10.1117/12.2217006

27 February 2016 Efficient light emission from hybrid inorganic/organic semiconductor structures by energy level optimization

R. Schlesinger, F. Bianchi, S. Blumstengel, Björn Kobin, K. Moudgil, S. Barlow, S. Hecht, S. R. Marder, N. Koch

Author Affiliations +

Proceedings Volume 9749, Oxide-based Materials and Devices VII; 974909 (2016) https://doi.org/10.1117/12.2217006
Event: SPIE OPTO, 2016, San Francisco, California, United States

Abstract

Innovative hybrid inorganic/organic structures (HIOS) should implement exciton creation by electrical injection in inorganic semiconductors followed by resonant energy transfer and light emission from the organic semiconductor. An inherent obstacle of such designs is the typically unfavorable energy level alignment at HIOS interfaces, which assists in exciton separation thus quenching light emission. Here, we introduce a technologically relevant method to optimize the hybrid structure's energy levels: ZnO and a tailored ladder-type oligophenylene. Using an organometallic donor interlayer the ZnO work function is substantially lowered eliminating the ZnO - L4P-sp3 interfacial energy level offsets enhancing the hybrid structure's radiative emission yield sevenfold.

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R. Schlesinger, F. Bianchi, S. Blumstengel, Björn Kobin, K. Moudgil, S. Barlow, S. Hecht, S. R. Marder, and N. Koch "Efficient light emission from hybrid inorganic/organic semiconductor structures by energy level optimization", Proc. SPIE 9749, Oxide-based Materials and Devices VII, 974909 (27 February 2016); https://doi.org/10.1117/12.2217006

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